Related papers: Electron transport in a slot-gate Si MOSFET
We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
The integer quantum Hall effect is analysed using a transport mechanism with a semi-classic wave packages of electrons in this paper. A strong magnetic field perpendicular to a slab separates the electron current into two branches with…
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing…
The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi…
Following recent experiments, we consider current flow in two dimensional electronic systems in the quantum Hall regime where a gradient in the electron density induces a spatial variation in the Hall resistivity. Describing the system in…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in…
To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many…
Low frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate…
We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by…
Transport in a two-dimensional electron gas subject to an external magnetic field is analyzed in the presence of a \textit{longitudinal barrier.} We show that \textit{quantum interference of the edge states} bound by the longitudinal…
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an…
We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized…
Electron drag between two two-dimensional electron gases in magnetic fields has been observed with a polarity opposite that for zero field. This negative drag requires that the electrons have a hole-like dispersion. Density dependence…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations.…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
The spin Hall effect does not generally result in a charge Hall voltage. We predict that in systems with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect is instead accompanied by a…
We report on the influence of voltmeters on measurements of the longitudinal resistance in the quantum Hall effect regime. We show that for typical input resistances for standard digital lock-in amplifiers the longitudinal resistance can…
We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal…