Related papers: Electron transport in a slot-gate Si MOSFET
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
We analyze electron transport in multiprobe quantum spin Hall (QSH) bars using the B\"{u}ttiker formalism and draw parallels with their quantum Hall (QH) counterparts. We find that in a QSH bar the measured resistance changes upon…
We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction.…
We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer,…
We study the transport properties of $HgTe$-based quantum wells containing simultaneously electrons and holes in magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $\nu=2$ and the $\nu=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic…
In the present article we investigate the influence of the contact region on the distribution of the chemical potential in integer quantum Hall samples, as well as the longitudinal and Hall resistance as a function of the magnetic field.…
Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric…
In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and…
Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in…
Due to the lack of simulation tools that take into account the actual geometry of complicated quantum Hall samples there are lots of experiments that are not yet fully understood. Already some years ago R. G. Mani recorded a shift of the…
We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave…
An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We…
I review some aspects of an alternative model of the quantum Hall effect, which is not based on the presence of disorder potentials. Instead, a quantization of the electronic drift current in the presence of crossed electric and magnetic…
We discuss quantum Hall effect in the presence of arbitrary pair interactions between electrons. It is shown that irrespective of the interaction strength the Hall conductivity is given by the filling fraction of Landau levels averaged over…
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…