Spin-dependent resistivity at transitions between integer quantum Hall states

K. Vakili; Y. P. Shkolnikov; E. Tutuc; N. C. Bishop; E. P. De Poortere; M. Shayegan

doi:10.1103/PhysRevLett.94.176402

Spin-dependent resistivity at transitions between integer quantum Hall states

Mesoscale and Nanoscale Physics 2009-11-11 v1

Authors: K. Vakili , Y. P. Shkolnikov , E. Tutuc , N. C. Bishop , E. P. De Poortere , M. Shayegan

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Abstract

The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi energy resides. The resistivity can be enhanced by an order of magnitude as the spin orientation of this energy level is aligned with the majority spin. We discuss possible causes and suggest a new explanation for spike-like features observed at the edges of quantum Hall minima near Landau level crossings.

Keywords

quantum hall effect spin physics in semiconductors composite fermions in quantum hall effect

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@article{arxiv.cond-mat/0501151,
  title  = {Spin-dependent resistivity at transitions between integer quantum Hall states},
  author = {K. Vakili and Y. P. Shkolnikov and E. Tutuc and N. C. Bishop and E. P. De Poortere and M. Shayegan},
  journal= {arXiv preprint arXiv:cond-mat/0501151},
  year   = {2009}
}

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4+ pages, 3 figures

Spin-dependent resistivity at transitions between integer quantum Hall states

Abstract

Keywords

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