Related papers: Negative Differential Resistance Induced by Mn Sub…
A number of recent studies indicate that the charge conduction of the LaAlO$_3$/SrTiO$_3$ interface at low temperature is confined to filaments which are linked to structural domain walls in the SrTiO$_3$ with drastic consequences for…
Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin…
We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact…
Modulation of the grain boundary properties in thermoelectric materials that have thermally activated electrical conductivity is crucial in order to achieve high performance at low temperatures. In this work, we show directly that the…
Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronics applications. Here, based on first-principles calculations, we propose a novel surface La interstitial…
The two dimensional conducting interfaces in SrTiO$_3$-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information…
Epitaxial superlattices of ferromagnetic/paramagnetic La$_{0.67}$Sr$_{0.33}$MnO$_3$/SrIrO$_3$ materials have been prepared on SrTiO$_3$ (100) substrate using pulse laser deposition technique. An unexpected onset of interface magnetic…
The Schottky barrier heights (SBHs) of defect-free interfaces of ZnO, CdO, MgO and SrO with various metals and different terminations are investigated by density functional supercell calculations. The oxide bands are corrected for their…
The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at…
The origin of the metal-to-insulator transition in RNiO3 perovskites with trivalent 4f ion has challenged the condensed matter research community for almost three decades. A drawback for progress in this direction has been the lack of…
The ground state properties of the pure perovskite compounds PrMnO$_3$ and NdMnO$_3$ were investigated by magnetization, magnetic AC susceptibility and specific heat measurements. A strongly anisotropic behavior has been detected for…
Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a…
The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics. For example, SrRuO_3 is a promising material…
We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has…
We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature…
We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3…
Electrical transport and specific heat properties of Nd_{1-x}Pb_{x}MnO_{3} single crystals for 0.15 < x 0.5 have been studied in low temperature regime. The resistivity in the ferromagnetic insulating (FMI) phase for x < 0.3 has an…
Mn site is substituted with closed shell ions (Al, Ga. Ti, Zr and a certain combination of Zr and Al) and also with Fe and Ru ions carrying the magnetic moment (S=5/2 and 2 respectively) at a fixed concentration of 5 at. %. Substitution did…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at…