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The effects of spin-orbit scattering of conduction electrons in the Kondo regime are investigated theoretically. It is shown that due to time-reversal symmetry, spin-orbit scattering does not suppress the Kondo effect, even though it breaks…
We investigate systems of spinless one-dimensional chiral fermions realized, e.g., in the arms of electronic Mach-Zehnder interferometers, at high energies. Taking into account the curvature of the fermionic spectrum and a finite…
We investigate the properties of the electron spin-transmission through an Aharonov-Bohm interferometer with an embedded multilevel quantum dot containing magnetic impurities. A suitable formalism is developed. The amplitude and the phase…
Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…
The present article reviews recent experimental investigations of spin dynamics in iron-based superconductors and their parent compounds by means of inelastic neutron scattering. It mainly focuses on the most contemporary developments in…
We report spin-polarized inelastic neutron scattering of the dynamical structure factor of the conical magnetic helix in the cubic chiral magnet MnSi. We find that the spectral weight of spin-flip scattering processes is concentrated on…
The quantum electrodynamical (QED) process of Compton scattering in strong magnetic fields is commonly invoked in atmospheric and inner magnetospheric models of x-ray and soft gamma-ray emission in high-field pulsars and magnetars. A major…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
We consider the azimuthal angle dependence in the cross section of the hard leptoproduction of a photon on a nucleon target. We show that this dependence allows to define observables that isolate the twist-two and twist-three sectors in the…
The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the…
We study spin and charge susceptibilities in the d-wave superconducting state whose underlying electronic dispersion is anisotropic due to the formation of the electronic nematic order. We show that the amplitude of the incommensurate peaks…
We study the spin-dependent scattering of charge carriers in a magnetized one dimensional Luttinger liquid from a localized non-homogeneous magnetic field, which might be brought about by the stray field of magnetic tip near a uniform…
Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same…
The evolution of the magnetic excitation spectrum of the unconventional superconductor CeCoIn$_{5}$ was studied by inelastic neutron scattering as a function of magnetic field applied in the [1, -1, 0] direction. The spin resonance…
Neutron scattering studies have provided important information about the momentum and energy dependence of magnetic excitations in cuprate superconductors. Of particular interest are the recent indications of a universal magnetic excitation…
Spin-dependent partial conductances are evaluated in a tight-binding description of electron transport in the presence of spin-orbit (SO) couplings, using transfer-matrix methods. As the magnitude of SO interactions increases, the…
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…
Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…