Related papers: A Monolithic Pixel Sensor in 0.15 micron Fully Dep…
In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening…
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…
The capacitance of the charge collection node of a sensor system is an important parameter for the design of the analog front-end electronics. The analog front-end of high-granularity sensors like for example hybrid pixel detectors need to…
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their…
This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they…
We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. The PDD structure is formed in a thick p-type substrate, to which high negative voltage is…
Recent advancements in particle physics demand pixel detectors that can withstand increased luminosity in the future collider experiments. In response, MALTA, a novel monolithic active pixel detector, has been developed with a cutting-edge…
Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…
In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…
The Belle II experiment, operating at the asymmetric SuperKEKB $e^+e^-$ collider, is preparing an upgrade of its vertex detector to cope with an increased luminosity of $6 \times 10^{35}$ cm$^{-2}$s$^{-1}$. The upgraded vertex detector…
DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption…
We present prototype modules for a tracking detector consisting of multiple layers of 0.25 mm diameter scintillating fibers that are read out by linear arrays of silicon photomultipliers. The module production process is described and…
Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R\&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow…
This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…
For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High…
Using industrial standard 0.35{\mu}m CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud…