Related papers: A Monolithic Pixel Sensor in 0.15 micron Fully Dep…
We present the design, fabrication, and measurement of a monolithically integrated optical receiver analog front end, where low power operation is a primary consideration with a goal of supporting 56 Gbaud intensity modulated direct detect…
We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This…
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…
We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology,…
We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future X-ray astronomy satellites that enable us to observe in the wide energy band of 0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8 {\mu}m…
The first evaluation of an ultra-high granularity digital electromagnetic calorimeter prototype using 1.0-5.8 GeV/c electrons is presented. The $25\times10^6$ pixel detector consists of 24 layers of ALPIDE CMOS MAPS sensors, with a pitch of…
The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 {\mu}m. In Topmetal-M, a novel…
We present the first demonstration of all-optical squeezing in an on-chip monolithically integrated CMOS-compatible platform. Our device consists of a low loss silicon nitride microring optical parametric oscillator (OPO) with a gigahertz…
CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…
Ensuring end-to-end security in image sensors has become essential as visual data can be exposed through multiple stages of the imaging pipeline. Advanced protection requires encryption to occur before pixel values appear on any readout…
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in…
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single…
Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element of SiPMs, can now be manufactured in CMOS processes,…
We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which…
We demonstrate coincidence measurements of spatially entangled photons by means of a novel type of multi-pixel based detection array. The adopted sensor is a fully digital 8$\times$16 silicon photomultiplier array allowing not only photon…
We report on measurements of 1 and 1.5 MeV monoenergetic electrons with a Timepix3-based detector using a 0.5 mm thick silicon sensor. A $^{90}$Sr $\beta$-emitting radioisotope was used as the source of electrons, and a monochromator…
CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with…
Monolithic active pixel sensors (MAPS) are now well established as a technology for tracking charged particles, especially when low material budget is desirable. For such applications, sensors focus on spatial resolution and pixels with…
Time-of-flight measurement is an important advancement in PET scanners to improve image reconstruction with a lower delivered radiation dose. This article describes the monolithic ASIC for the TT-PET project, a novel idea for a…
For large scale applications, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the state of the art in pixel detector technology to date. They have been developed and start to be used as tracking…