Related papers: Metastable state involved resonant tunneling throu…
Coulomb blockade phenomena and quantum fluctuations are studied in mesoscopic metallic tunnel junctions with high charging energies. If the resistance of the barriers is large compared to the quantum resistance, transport can be described…
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…
In this paper, we carry out a theoretical analysis of the zero-frequency and finite-frequency shot noise in electron tunneling through a two-level interacting system connected to two leads, when a coherent coupling between the two levels is…
We study a single-level quantum dot strongly coupled to a superconducting lead and tunnel-coupled to a normal electrode which can exchange energy with a single-mode resonator. We show that a such system can sustain lasing characterized by a…
We study resonant tunneling through a single-level quantum dot in the presence of strong Coulomb repulsion beyond the perturbative regime. The level is either spin-degenerate or can be split by a magnetic field. We, furthermore, discuss the…
Electrostatic force microscopy at cryogenic temperatures was used to probe the electrostatic interaction between a conductive atomic force microscopy tip and electronic charges trapped in an InAs quantum dot. Measurement of the…
We study the behavior of shot noise in resonant tunneling junctions far from equilibrium. Quantum-coherent elastic charge transport can be characterized by a transmission function, that is the probability for an incoming electron at a given…
Current-voltage characteristics of resonant-tunneling structures often exhibit intrinsic bistabilities. In the bistable region of the I-V curve one of the two current states is metastable. The system switches from the metastable state to…
We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling…
An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low holes of approximately n_p=5x10^{14} cm^{-3} into the valence…
Photo-excited quantum materials can be driven into thermally inaccessible metastable states that exhibit structural, charge, spin, topological and superconducting orders. Metastable states typically emerge on timescales set by the intrinsic…
Deterministic oscillations of current-induced metastable resistivity in changing voltage have been detected in La$_{0.82}$Ca$_{0.18}$MnO$_3$ single crystals. At low temperatures, below the Curie point, application of specific bias…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
Based on our recently developed quantum transport theory in term of an exact master equation, the corresponding particle-number resolved ($n$-resolved) master equation and the related shot noise spectrum formalism covering the full…
We study the transport through a quantum dot subject to a randomly fluctuating potential, generated by a sequence of pulses in the gate voltage with the help of the autoregressive model. We find that the tunneling current is multistable…
We consider the transport spectroscopy of a quantum dot with an even number of electrons at finite bias voltage within the Coulomb blockade diamond. We calculate the tunneling current due to the elastic and inelastic co-tunneling processes…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
We propose here a model for the pair tunneling states observed by Ashoori and co-workers (Phys. Rev. Lett. {\bf 68}, 3088 (1992)) in GaAs quantum dots. We show that while GaAs is a weakly-polar semiconductor, coupling to optical phonons is…
We report the observation of two fundamental sub-gap transport processes through a quantum dot (QD) with a superconducting contact. The device consists of a carbon nanotube contacted by a Nb superconducting and a normal metal contact.…