Related papers: Metastable state involved resonant tunneling throu…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
We report anomalous critical transport behavior in a GaAs structure containing a dense array of ErAs quantum dots. The structure displays a voltage (electric field)-controlled insulator-to-metal transition and strong hysteresis in the…
We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase ($I$) and the quadrature ($Q$) components…
We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peak of indirect…
We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized…
We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is…
By placing the biased tip of an atomic force microscope at a specific position above a semiconductor surface we can locally shape the potential landscape. Inducing a local repulsive potential in a two dimensional electron gas near a quantum…
The dynamic interplay of transport, electrostatic, and magnetic effects in the resonant tunneling through ferromagnetic quantum wells is theoretically investigated. It is shown that the carrier-mediated magnetic order in the ferromagnetic…
We investigate a paradigm example of cavity quantum electrodynamics with many body systems: an ultracold atomic gas inside a pumped optical resonator. In particular, we study the stability of atomic insulator-like states, confined by the…
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…
We study resonant tunneling through quantum-dot systems in the presence of strong Coulomb repulsion and coupling to the metallic leads. Motivated by recent experiments we concentrate on (i) a single dot with two energy levels and (ii) a…
We use scanning tunneling microscopy to investigate the (001) surface of cleaved SmB6 Kondo insulator. Variable temperature dI/dV spectroscopy up to 60 K reveals a gap-like density of state suppression around the Fermi level, which is due…
A study of magneto-transport through quantum dots is presented. The model allows to analyze tunnelling both from bulk-like contacts and from 2D accumulation layers. The fine features in the I-V characteristics due to the quantum dot states…
We consider the cosmological model of a self-interacting $\phi^4 - \phi^2$ quantum scalar field and extend our previous results, [3], on resonant tunneling and consequent particle production, to the case of finite temperature. Using the…
The conditions for the occurrence of pronounced magnetoelectric bistabilities in the resonant tunneling through a ferromagnetic quantum well are theoretically investigated. The bistability appears due to the mutual feedback of the carriers…
In a tunneling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the trasparency of the barriers and the temperature. Gate voltages allow for changes of the…
Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied…
Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their…
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed…
A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be…