Related papers: Demonstration of a mid infrared silicon Raman ampl…
We demonstrate mid-IR integrated race-track resonators on a III-V semiconductor platform,InGaAs core epitaxially grown on InP. We have performed a complete characterization of the optical propagation losses at wavelength = 4.6 um and…
Applied quantum optics stands to revolutionise many aspects of information technology, provided performance can be maintained when scaled up. Silicon quantum photonics satisfies the scaling requirements of miniaturisation and…
In this study, rigorous numerical calculation was utilized to characterize the focal properties of mid-infrared silicon microlens with the size about tens of micrometers. It is found that the focal shift phenomenon also exists in…
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center…
We report on the generation of broadband, high-energy femtosecond pulses centered at 1.28 um by stimulated Raman scattering in pressurized hydrogen cell. Stimulated Raman scattering is performed by two chirped and delayed pulses originating…
Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon and other technology-essential…
Raman amplification in plasma has been promoted as a means of compressing picosecond optical laser pulses to femtosecond duration to explore the intensity frontier. Here we show for the first time that it can be used, with equal success, to…
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…
Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…
We demonstrate low loss ridge waveguides and the first ring resonators for the mid-infrared, for wavelengths ranging from 5.4 to 5.6 {\mu}m. Structures were fabricated using electron-beam lithography on the silicon-on-sapphire material…
Mid-infrared (mid-IR) frequency combs have broad applications in molecular spectroscopy and chemical/biological sensing. Recently developed microresonator-based combs in this wavelength regime could enable portable and robust devices using…
Wavelength widely tunable infrared fiber lasers that simultaneously deliver high pulse energies with narrow linewidths are critical for applications ranging from spectroscopy to nonlinear optics, yet achieving this combination has remained…
Silicon Photomultipliers (SiPMs) are an excellent candidate for the development of large-area light sensors. Large SiPM-based detectors require low-noise pre-amplifiers to maximize the signal coupling between the sensor and the readout…
High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed…
We propose a high thermal conductivity infrared (IR) filter using alumina for use in millimeter wave detection systems. We constructed a prototype two-layer anti-reflection (AR) coated alumina filter with a diameter of 100mm and a thickness…
We experimentally demonstrate wide-band (>100 THz) frequency down-conversion of near-infrared (NIR) femtosecond-scale pulses from an Er:fiber laser to the mid-infrared (MIR) using four-wave-mixing (FWM) in photonic-chip silicon-nitride…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
We present a 380-520 GHz balanced superconductor-insulator-superconductor (SIS) mixer on a single silicon substrate. All radio-frequency (RF) circuit components are fabricated on a $9 \mu$m thick membrane. The intermediate frequency (IF) is…
We couple photoluminescent semiconducting 7-atom wide armchair edge graphene nanoribbons to plasmonic nanoantenna arrays and demonstrate an enhancement of the photoluminescence and Raman scattering intensity of the nanoribbons by more than…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…