Related papers: Demonstration of a mid infrared silicon Raman ampl…
We propose a method for amplifying a train of sub-femtosecond pulses of circularly or elliptically polarized extreme ultraviolet (XUV) radiation constituted by high-order harmonics of an infrared (IR) laser field, in a neon-like active…
Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration…
Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300 nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To…
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long…
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end,…
Infrared (IR) imaging is one of the significant tools for the quality control measurements of fabricated samples. Standard IR imaging techniques use direct measurements, where light sources and detectors operate at IR range. Due to the…
The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the…
A comparative analysis of two Raman line-shape functions has been carried out to validate the true representation of experimentally observed Raman scattering data for semiconducting nanomaterials. A modified form of already existing phonon…
High-power ultrafast laser sources in the short-wave infrared region are of great interest for numerous applications, including secondary sources of radiation and processing of materials commonly opaque in the near-infrared region. In this…
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The…
Microscopic pyramidal pits in a reflective surface, a geometry similar to a retroreflector, are frequently used to enhance signal strength. The enhancement effect is generally attributed to surface plasmons, however, the sub-wavelength to…
With growing interest in the mid-infrared spectral region, dysprosium has recently been revisited for efficient high-performance infrared source development. Despite historically receiving less attention than other rare earth ions, in…
In this letter, we present a high pulse energy Raman laser at 1946 nm wavelength directly pumped with a 1533 nm custom-made fiber laser. The Raman laser is based on the stimulated Raman scattering (SRS) in an 8-meter carbon dioxide (CO2)…
The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and…
The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Recent advances in the development of atomically thin layers of semiconducting transition…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Generation of laser-like narrow bandwidth emissions from nitrogen molecular ions generated in intense near- and mid-infrared femtosecond laser fields has aroused much interest because of the mysterious physics underlying such a phenomenon…
The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…
The sensitivity of laser interferometers can be pushed into regimes that enable the direct observation of quantum behaviour of mechanical oscillators. In the past, membranes with subwavelength thickness (thin films) have been proposed as…
Future high-energy physics experiments using SiPMs as photosensitive elements may require operation at low temperatures (down to 80 K) to measure single photons with high time resolution in a highly radioactive environment. This calls for a…