Related papers: Use of negative capacitance to provide a sub-thres…
The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance…
The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…
In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)…
We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope…
The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by…
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…
Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…
A field-effect transistor (FET) amplifier for small voltage signals is presented. Its design is elementary and the construction can be afforded by anyone. Despite its simplicity, with a voltage noise less than 1 nV/sqrt(Hz), it outperforms…
An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and…
Across many areas of science, there is a need to generate magnetic fields that are both ultra-stable and switchable on and off. While permanent and superconducting magnets offer exceptionally low-noise fields, they are not readily…
In RF (Radio Frequency) domain, one of the limitations of using MEMS (Micro Electromechanical Systems) switching devices for medium power applications is RF power. Failure phenomena appear even for 500 mW. A design of MEMS switched…
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used,…
Pulse-based studies of ferroelectric capacitor systems have been used by several groups to experimentally probe the mechanisms of apparent negative capacitance. In this paper, the behavior of such systems is modeled through SPICE simulation…
To extend the Moores law in the 5 nm node, a large number of two dimensional (2D) materials and devices have been thoroughly researched, among which the cold metals 2H MS2 (M = Nb, Ta) with unique band structures are expected to achieve the…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
We theoretically investigate the effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic…
Transistor is a three terminal semiconductor device normally used as an amplifier or as a switch. Here the alternating current (a.c) rectifying property of the transistor is considered. The ordinary silicon diode exhibits a voltage drop of…