Related papers: Strong extinction of a far-field laser beam by a s…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
Remote focusing of light in a graded-index medium via mode interference is demonstrated using exact analytical solutions of the wave equation. Strong focusing of light occurs at extremely long distances and it revivals periodically with…
The resolution of optical imaging devices is ultimately limited by the diffraction of light. To circumvent this limit, modern super-resolution microscopy techniques employ active interaction with the object by exploiting its optical…
Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
We show that a laser beam can be diffracted by a more concentrated light pulse due to quantum vacuum effects. We compute analytically the intensity pattern in a realistic experimental configuration, and discuss how it can be used to measure…
In this paper, by representing a single level rate equation model for InAs/GaAs quantum dot lasers and computations by fourth order Runge-Kutta method some characteristics of the output laser are considered. The change of photon number in…
We investigated the complex index of refraction in the x-ray regime of atoms in laser light. The laser (intensity up to 10^13 W/cm^2, wavelength 800nm) modifies the atomic states but, by assumption, does not excite or ionize the atoms in…
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…
Modifying light fields at single-photon level is a key challenge for upcoming quantum technologies and can be realized in a scalable manner through integrated quantum photonics. Laser-written diamond photonics offers three-dimensional…
This letter presents a spatial filter based on saturated absorption in gas as a replacement for the solid pinhole in a lens-pinhole-lens filtering system. We show that an ultraviolet laser pulse focused through ozone will have its spatial…
We provide a quantitative explanation of the mechanism of the far-field intensity modulation induced by a nanoparticle in a focused Gaussian laser beam, as was demonstrated in several recent direct detection studies. Most approaches take…
A large distance propagation in turbulent atmosphere results in disintegration of laser beam into speckles. We find that the most intense speckle approximately preserves both the Gaussian shape and the diameter of the initial collimated…
We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs…
We put stringent constraints for the first time on the dust properties in the circumburst medium of a gamma-ray burst (GRB) afterglow. This is based on the optical spectrum of GRB 020813 (z=1.255), obtained with Keck I LRIS 4.65 h after the…
We studied quantum depletion in a gaseous Bose-Einstein condensate. An optical lattice enhanced the atomic interactions and modified the dispersion relation resulting in strong quantum depletion. The depleted fraction was directly observed…
We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peak of indirect…
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode…
To overcome the limit of diffraction while achieving the superresolution technique, solid immersion lenses are the key optical elements for data storage and nanophotonics applications. Recent demonstrations have shown how different…
A technique for production of an electron beam with a high transverse emittance ratio. a "flat" beam, has been proposed by Brinkmann, Derbenev, and Floettmann.[1] The cathode of an RF-laser gun is immersed in a solenoidal magnetic field; as…