Related papers: Strong extinction of a far-field laser beam by a s…
The first Gaia data release unlocked the access to the photometric information of 1.1 billion sources in the $G$-band. Yet, given the high level of degeneracy between extinction and spectral energy distribution for large passbands such as…
We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with…
The uniformity of the intensity and phase of laser beams is crucial to high-performance atom interferometers. Inhomogeneities in the laser intensity profile cause contrast reductions and systematic effects in interferometers operated with…
Mixtures of ultracold quantum gases are at the heart of high-precision quantum tests of the weak equivalence principle, where extremely low expansion rates have to be reached with matter-wave lensing techniques. We propose to simplify this…
We report results of a unprecedentedly deep, blind search for Ly-alpha emitters (LAEs) at z = 5.7 using IMACS, the Inamori-Magellan Areal Camera & Spectrograph, with the goal of identifying missing sources of reionization that could also be…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
High-performance, high-volume-manufacturing Si3N4 photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects.…
The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different…
Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission windows are essential for practical applications in quantum communication, distributed…
In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…
We measure the angular divergence of a quasi-continuous, rf-outcoupled, free-falling atom laser as a function of the outcoupling frequency. The data is compared to a Gaussian-beam model of laser propagation that generalizes the standard…
We propose a new phenomenological law for the shape of the spectral lines in the infrared, which accounts for the exponential decay of the extinction coefficient in the high frequency region, observed in many spectra. We apply this law to…
We present a universal deep-learning method that reconstructs super-resolved images of quantum emitters from a single camera frame measurement. Trained on physics-based synthetic data spanning diverse point-spread functions, aberrations,…
The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si…
The high scintillation luminosity of n-type GaAs at 10K is surprising because (1) with a refractive index of about 3.5, escape is inhibited by total internal reflection and (2) narrow-beam experiments at 90K report infrared absorption…
Arrays of quantum dot micropillar lasers are an attractive technology platform for various applications in the wider field of nanophotonics. Of particular interest is the potential efficiency enhancement as consequence of cavity quantum…
Semiconductor nanowires are attractive for photovoltaic applications because light absorption can be enhanced compared to planar layers due to the more complex coupling of light with wavelength-scale matter. However, experimentally it is…
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is…
Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key…
Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high…