Related papers: Strong extinction of a far-field laser beam by a s…
Exciton, trion and biexciton dephasing rates are measured within the inhomogeneous distribution of an InAs quantum dot (QD) ensemble using two-dimensional Fourier-transform spectroscopy. The dephasing rate of each excitonic state is similar…
This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam…
Reabsorption, the multiple scattering of spontaneously emitted photons in optically thick gases, is a major limitation to efficient optical pumping and laser cooling in ultracold gases. We report mitigation of reabsorption using spatial and…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are…
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of…
Absorption covers the physical processes which convert intense photon flux into energetic particles when a high-power laser illuminates optically-thick matter. It underpins important petawatt-scale applications today, e.g., medical-quality…
Quantum dots play a promising role in the development of novel optical and biosensing devices. In this study, we investigated steady-state and time-dependent luminescence properties of InGaP/ZnS core/shell colloidal quantum dots in a…
We study the fluorescence light emitted from GaAs excitons in semiconductor quantum wells. The excitons are modeled as interacting bosons. By combining quantum optical methods for the excitonic emission spectrum with many particle…
The exciton lifetimes $T_1$ in arrays of InAs/GaAs vertically coupled quantum dot pairs have been measured by time-resolved photoluminescence. A considerable reduction of $T_1$ by up to a factor of $\sim$ 2 has been observed as compared to…
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…
The photoluminescence spectrum of a single quantum dot was recorded as a secondary resonant laser optically dressed either the vacuum-to-exciton or the exciton-to-biexciton transitions. High-resolution polarization-resolved measurements…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
In very intense electromagnetic fields, the vacuum refractive index is expected to be modified due to nonlinear quantum electrodynamics (QED) properties. Several experimental tests using high intensity lasers have been proposed to observe…
We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias…
Interfering deep ultraviolet (DUV) lasers can induce substantial density modulations in an ozone-doped gas flow via photochemical reactions, creating volume diffraction gratings. These transient optics are immune to target debris and…
Relations between the observed quantities for a beamed radio jet, apparent transverse speed and apparent luminosity (beta_app,L), and the intrinsic quantities, Lorentz factor and intrinsic luminosity (gamma,L_o), are investigated. The…
The low-energy gamma-ray domain is an important window for the study of the high energy Universe. Here matter can be observed in extreme physical conditions and during powerful explosive events. However, observing gamma-rays from faint…
Today's high-intensity laser facilities produce short pulses can, in tight focus, reach peak intensities of $10^{22}\,\mathrm{Wcm}^{-2}$ and, in long focus, wakefield-accelerate electrons to GeV energies. The radiation-reaction--dominated…