Related papers: Strong extinction of a far-field laser beam by a s…
We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured…
It has recently been argued from a laser engineering point of view that there are only a few magic colors for optical SETI. These are primarily the Nd:YAG line at 1064 nm and its second harmonic 532.1 nm. Next best choices would be the sum…
We report experimental results on x-ray diffraction of quantum-state-selected and strongly aligned ensembles of the prototypical asymmetric rotor molecule 2,5-diiodobenzonitrile using the Linac Coherent Light Source. The experiments…
We report the first terahertz study of the intra-excitonic 1s-2p transition at high excitation densities in GaAs/AlGaAs quantum wells. A strong shift, broadening, and ultimately the disappearance of this resonance occurs with increasing…
We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are…
Here we report the development of high-efficiency microscale GaAs laser power converters, and their successful transfer printing onto silicon substrates, presenting a unique, high power, low-cost and integrated power supply solution for…
We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain. The investigated nanocavities contain only 0.4 quantum dots on an average; an ultra-low density quantum dot sample…
Stable transport of laser beams in highly over-dense plasmas is of significance in fast ignition of inertial confinement fusion, relativistic electrons generation, and powerful electromagnetic emission, but hard to realize. Early in 1996,…
Direct imaging instruments have the spatial resolution to resolve exoplanets from their host star. This enables direct characterization of the exoplanets atmosphere, but most direct imaging instruments do not have spectrographs with high…
Compton inverse radiation emitted due to backscattering of laser pulses off the relativistic electrons possesses high spectral density and high energy of photons - in hard x-ray up to gamma-ray energies - because of short wavelength of…
We present a theoretical and experimental study of photonic and electronic transport properties of a voltage biased InAs semiconductor double quantum dot (DQD) that is dipole-coupled to a superconducting transmission line resonator. We…
In this paper, focal shift of a Guassian laser beam tightly focused through several planar dielectric interfaces is discussed. It is shown that the focal shift and focus point can be changed by variation of refractive index mismatch and…
High-power lasers with narrow linewidth and high beam quality in the visible spectrum are essential for emerging quantum and space technologies. Here we report significant advances in diamond Raman lasers, generating diffraction-limited…
We present the results of transverse emittance and longitudinal current profile measurements of high bunch charge (greater than or equal to 100 pC) beams produced in the DC gun-based Cornell Energy Recovery Linac Photoinjector. In…
Generation of highly collimated monoenergetic relativistic ion beams is one of the most challenging and promising areas in ultra-intense laser-matter interactions because of the numerous scientific and technological applications that…
We have studied a system consisted of two coupled quantum dots containing two electrons subjected by a laser field. The effect of the laser is described by the dressed-band approach involving the concept of the conduction/valence effective…
The feasibility of generation of bright ultrashort gamma-ray pulses is demonstrated in the interaction of a relativistic electron bunch with a counterpropagating tightly-focused superstrong laser beam in the radiation dominated regime. The…
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution…
Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we…
The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is…