Related papers: Anisotropic spin splitting of the electron ground …
Inelastic spin relaxation and spin splitting $\epsilon_{\mathrm{s}}$ in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Due to both g-factor energy dependence and spin-orbit coupling $\epsilon_{\mathrm{s}}$…
A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $\mu$m (around 0.8 eV photon energy) is…
We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Land\'e-g-factor. The…
g-factor tuning of electrons in quantum dots is studied as function of in-plane and perpendicular magnetic fields for different confinements. Rashba and Dresselhaus effects are considered, and comparison is made between wide- and narrow-gap…
We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric fields. We present the construction of…
The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the…
The electron Land\'e g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via…
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with…
We study the variation in the Land$\acute{\text{e}}$ g-factor of electron spins induced by both anisotropic gate potentials and magnetic fields in InAs quantum dots for possible implementation towards solid state quantum computing. In this…
This work reports the measurement of electron $g$ factor anisotropy ($| \Delta g |$ = $| g_{001} - g_{1 \bar 1 0} |$) for phosphorous donor qubits in strained silicon (sSi = Si/Si$_{1-x}$Ge$_x$) environments. Multi-million-atom…
We extend the range of quantum dot (QD) emission energies where electron and hole $g$ factors have been measured to the practically important telecom range. The spin dynamics in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled QDs…
Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman…
We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot…
We have determined the Land\'e factor g* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g*_\parallel = 0.75 for the specific dot…
We have measured the full angular dependence, as a function of the direction of magnetic field, for the Zeeman splitting of individual energy states in copper nanoparticles. The g-factors for spin splitting are highly anisotropic, with…
Extending a previous work on spin precession in GaAs/AlGaAs quantum dots with spin-orbit coupling, we study the role of deformation in the external confinement. Small elliptical deformations are enough to alter the precessional…
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic…
We measure the effective Lande g-factor of high-mobility two-dimensional electrons in a modulation-doped AlAs quantum well by tilting the sample in a magnetic field and monitoring the evolution of the magnetoresistance oscillations. The…
We report on the modification of the g-factor by an in-plane electric field in an In$_{0.031}$Ga$_{0.969}$As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine…
Self-assembled InGaAs/GaAs quantum dots (QDs) are of particular importance for the deterministic generation of spin-photon entanglement. One promising scheme relies on the Larmor precession of a spin in a transverse magnetic field, which is…