We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.
@article{arxiv.2103.13658,
title = {Twisted monolayer and bilayer graphene for vertical tunneling transistors},
author = {Davit A. Ghazaryan and Abhishek Misra and Evgenii E. Vdovin and Kenji Watanabe and Takashi Taniguchi and Sergei V. Morozov and Artem Mishchenko and Kostya S. Novoselov},
journal= {arXiv preprint arXiv:2103.13658},
year = {2021}
}