We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable I-V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or non-resonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. The nanoscale architecture can enable uniquely fast switching times.
@article{arxiv.1506.05031,
title = {Resonant Tunneling and Intrinsic Bistability in Twisted Graphene Structures},
author = {Joaquin F. Rodriguez-Nieva and Mildred S. Dresselhaus and Leonid S. Levitov},
journal= {arXiv preprint arXiv:1506.05031},
year = {2016}
}