We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.
@article{arxiv.1412.3027,
title = {Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures},
author = {Babak Fallahazad and Kayoung Lee and Sangwoo Kang and Jiamin Xue and Stefano Larentis and Christopher Corbet and Kyounghwan Kim and Hema C. P. Movva and Takashi Taniguchi and Kenji Watanabe and Leonard F. Register and Sanjay K. Banerjee and Emanuel Tutuc},
journal= {arXiv preprint arXiv:1412.3027},
year = {2015}
}
Comments
26 pages, 6 figures; supporting information includes one figure