Tunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer

T. Moriyama; R. Cao; X. Fan; G. Xuan; B. K. Nikolic; Y. Tserkovnyak; J. Kolodzey; John Q. Xiao

doi:10.1103/PhysRevLett.100.067602

Tunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer

Materials Science 2008-02-26 v1 Strongly Correlated Electrons

Authors: T. Moriyama , R. Cao , X. Fan , G. Xuan , B. K. Nikolic , Y. Tserkovnyak , J. Kolodzey , John Q. Xiao

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Abstract

We report the electrical detection of magnetization dynamics in an Al/AlOx/Ni80Fe20/Cu tunnel junction, where a Ni80Fe20 ferromagnetic layer is brought into precession under the ferromagnetic resonance (FMR) conditions. The dc voltage generated across the junction by the precessing ferromagnet is enhanced about an order of magnitude compared to the voltage signal observed when the contacts in this type of multilayered structure are ohmic. We discuss the relation of this phenomenon to magnetic spin pumping and speculate on other possible underlying mechanisms responsible for the enhanced electrical signal.

Keywords

magnetization precession tunnel junction ferromagnetic resonance spin pumping dc voltage ni80fe20 magnetic dynamics

Cite

@article{arxiv.0802.3646,
  title  = {Tunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer},
  author = {T. Moriyama and R. Cao and X. Fan and G. Xuan and B. K. Nikolic and Y. Tserkovnyak and J. Kolodzey and John Q. Xiao},
  journal= {arXiv preprint arXiv:0802.3646},
  year   = {2008}
}

Tunnel barrier enhanced voltage signals generated by magnetization precession of a single ferromagnetic layer

Abstract

Keywords

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