We studied the response of a ferromagnet-insulator-normal metal tunnel structure under an external oscillating radio frequency (R.F.) magnetic field. The D. C. voltage across the junction is calculated and is found not to decrease despite the high resistance of the junction; instead, it is of the order of μV to 100μV, much larger than the experimentally observed value (100 nano-V) in the "strong coupled" ohmic ferromagnet-normal metal bilayers. This is consistent with recent experimental results in tunnel structures, where the voltage is larger than μVs. The damping and loss of an external RF field in this structure is calculated.
@article{arxiv.0711.4939,
title = {Large voltage from spin pumping in magnetic tunnel junctions},
author = {S. T. Chui and Z. F. Lin},
journal= {arXiv preprint arXiv:0711.4939},
year = {2009}
}