Tunable MEMS VCSEL on Silicon substrate
Applied Physics
2019-03-22 v1 Optics
Abstract
We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS element. The MEMS VCSEL device uses a high contrast grating mirror on a MEMS stage as the bottom mirror, a wafer bonded InP with quantum wells for amplification and a deposited dielectric DBR as the top mirror. A 40 nm tuning range and a mechanical resonance frequency in excess of 2 MHz are demonstrated.
Cite
@article{arxiv.1903.08691,
title = {Tunable MEMS VCSEL on Silicon substrate},
author = {Hitesh Kumar Sahoo and Thor Ansbæk and Luisa Ottaviano and Elizaveta Semenova and Fyodor Zubov and Ole Hansen and Kresten Yvind},
journal= {arXiv preprint arXiv:1903.08691},
year = {2019}
}