Spin-valley system in a gated MoS$_2$-monolayer quantum dot
Abstract
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement potential and force intervalley transitions. The present Rashba spin-orbit coupling additionally allows for spin operations. Moreover, both effects enable the spin-valley SWAP. The device structure is modeled realistically, taking into account feasible dot-forming potential and electric field that controls the Rasha coupling. Therefore, by performing reliable numerical simulations, we show how by electrically controlling the state of the electron in the device, we can obtain single- and two-qubit (thus universal) gates in a spin-valley two-qubit system. Through simulations we investigate possibility of implementation of two qubits \textit{locally}, based on single electron, with an intriguing feature that two-qubit gates are easier to realize than single ones.
Cite
@article{arxiv.1907.03299,
title = {Spin-valley system in a gated MoS$_2$-monolayer quantum dot},
author = {J. Pawłowski},
journal= {arXiv preprint arXiv:1907.03299},
year = {2019}
}
Comments
13 pages, 17 figures