English

Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides

Mesoscale and Nanoscale Physics 2021-11-24 v2

Abstract

We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking and strong spin-orbit coupling result in two degenerate states, one of the qubit states being spin-down located at the +K+K valley of the Brillouin zone, and the other state located at the K-K valley with spin up. We describe the qubit operations necessary to rotate the spin-valley qubit as a combination of the applied vertical electric field, enabling spin-orbit coupling in a single valley, with a lateral strongly localized valley-mixing gate.

Keywords

Cite

@article{arxiv.2106.15090,
  title  = {Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides},
  author = {Abdulmenaf Altıntaş and Maciej Bieniek and Amintor Dusko and Marek Korkusiński and Jarosław Pawłowski and Paweł Hawrylak},
  journal= {arXiv preprint arXiv:2106.15090},
  year   = {2021}
}