Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass
Mesoscale and Nanoscale Physics
2007-05-23 v2 Strongly Correlated Electrons
Abstract
We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at rs=5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (~15%) is more modest in three dimensions around metallic densities (rs~5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.
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Cite
@article{arxiv.cond-mat/0509300,
title = {Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass},
author = {Ying Zhang and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/0509300},
year = {2007}
}
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