English

Sixteen-state magnetic memory based on the extraordinary Hall effect

Strongly Correlated Electrons 2015-06-03 v1
Authors: A. Segal , M. Karpovski , A. Gerber
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Abstract

We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells.

Keywords

magnetic memory extraordinary Hall effect perpendicular magnetic anisotropy multilevel ferromagnetic dots multi-bit storage

Cite

@article{arxiv.1112.1624,
  title  = {Sixteen-state magnetic memory based on the extraordinary Hall effect},
  author = {A. Segal and M. Karpovski and A. Gerber},
  journal= {arXiv preprint arXiv:1112.1624},
  year   = {2015}
}

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