We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process.
@article{arxiv.1106.2403,
title = {Topological Insulator Cell for Memory and Magnetic Sensor Applications},
author = {T. Fujita and M. B. A. Jalil and S. G. Tan},
journal= {arXiv preprint arXiv:1106.2403},
year = {2011}
}