Related papers: Sixteen-state magnetic memory based on the extraor…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
Thin Co/Pd multilayers, with room temperature perpendicular anisotropy and an enhanced surface scattering, were studied for the possible use in the extraordinary Hall effect (EHE) - based magnetic memory devices. Polarity of the EHE signal…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a programming methodology that allows for operating metal-oxide…
Tilted off-plane magnetic anisotropy induces two unusual characteristic magnetotransport phenomena: extraordinary Hall effect in the presence of an in-plane magnetic field, and non-monotonic anisotropic magnetoresistance in the presence of…
We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant.…
At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at $\nu$ = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…
Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
We used micromagnetic simulations to investigate the spatial distributions of the effective magnetic fields induced by spin chirality in crossed nanowires with three characteristic magnetic structures: a radiated-shape, an antivortex, and a…
Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) DC transport data reported for eight bulk-crystal and six oriented-film…
The anomalous properties of the Hall constant in the normal state of high-$T_c$ superconductors are investigated within the single-band Hubbard model. We argue that the Mori theory is the appropriate formalism to address the Hall constant,…
We show that a finite Hall effect in zero applied magnetic field occurs for partially filled bands in certain time-reversal violating states with zero net flux per unit-cell. These states are the Magneto-chiral states with parameters in the…
We show that a sharp dependence of the Hall coefficient $R$ on the magnetic field $B$ arises in two-dimensional electron systems with randomly located strong scatterers. The phenomenon is due to classical memory effects. We calculate…
A coding scheme is introduced, allowing to store a set of linked bit strings in planar magnetic nanoelements with holes. Analytical expressions for the corresponding magnetization distributions are developed up to a homotopy and the…
The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…