We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be 3.4−0.9+2.9×10−10cm2/bit and 7.3−3.5+1.9MeV/(mg/cm2), respectively. Using these values, the SEU rate in orbit is estimated to be ≲ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.
@article{arxiv.2210.05049,
title = {Single Event Tolerance of X-ray SOI Pixel Sensors},
author = {Kouichi Hagino and Mitsuki Hayashida and Takayoshi Kohmura and Toshiki Doi and Shun Tsunomachi and Masatoshi Kitajima and Takeshi G. Tsuru and Hiroyuki Uchida and Kazuho Kayama and Koji Mori and Ayaki Takeda and Yusuke Nishioka and Masataka Yukumoto and Kira Mieda and Syuto Yonemura and Tatsunori Ishida and Takaaki Tanaka and Yasuo Arai and Ikuo Kurachi and Hisashi Kitamura and Shoji Kawahito and Keita Yasutomi},
journal= {arXiv preprint arXiv:2210.05049},
year = {2023}
}
Comments
9 pages, 5 figures, accepted for publication in JATIS