Single Event Effects in the Pixel readout chip for BTeV

G. Chiodini; J. A. Appel; G. Cardoso; D. C. Christian; M. R. Coluccia; J. Hoff; S. W. Kwan; A. Mekkaoui; R. Yarema; S. Zimmermann

doi:10.1016/S0168-9002(02)02030-2

Single Event Effects in the Pixel readout chip for BTeV

High Energy Physics - Experiment 2008-11-26 v1

Authors: G. Chiodini , J. A. Appel , G. Cardoso , D. C. Christian , M. R. Coluccia , J. Hoff , S. W. Kwan , A. Mekkaoui , R. Yarema , S. Zimmermann

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Abstract

In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.

Keywords

particle detector detector readout electronics

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@article{arxiv.hep-ex/0111094,
  title  = {Single Event Effects in the Pixel readout chip for BTeV},
  author = {G. Chiodini and J. A. Appel and G. Cardoso and D. C. Christian and M. R. Coluccia and J. Hoff and S. W. Kwan and A. Mekkaoui and R. Yarema and S. Zimmermann},
  journal= {arXiv preprint arXiv:hep-ex/0111094},
  year   = {2008}
}

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15 pages, 6 Postscript figures

Single Event Effects in the Pixel readout chip for BTeV

Abstract

Keywords

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