With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for Ion, Ioff, and the Ion/Ioff ratio, and propose a resistor network model including screening and interlayer coupling to explain the experimental findings. In particular, our model does not invoke modification of the linear energy-band structure of graphene for the multilayer case. Noise reduction in nano-scale few-layer graphene transistors is experimentally demonstrated and can be understood within this model as well.
@article{arxiv.0909.2001,
title = {Screening and interlayer coupling in multilayer graphene field-effect transistors},
author = {Yang Sui and Joerg Appenzeller},
journal= {arXiv preprint arXiv:0909.2001},
year = {2009}
}