Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks
Optics
2011-05-31 v1 Computational Physics
Abstract
Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D computational domains and in the presence of sidewall-angles and corner-roundings.
Keywords
Cite
@article{arxiv.1105.6052,
title = {Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks},
author = {S. Burger and L. Zschiedrich and J. Pomplun and F. Schmidt},
journal= {arXiv preprint arXiv:1105.6052},
year = {2011}
}
Comments
SPIE Europe Optical Metrology, Conference Proceedings