Rigorous Simulation of 3D Masks
Abstract
We perform 3D lithography simulations by using a finite-element solver. To proof applicability to real 3D problems we investigate DUV light propagation through a structure of size 9 microns times 4 microns times 65 nm. On this relatively large computational domain we perform rigorous computations (No Hopkins) taking into account a grid of 11 times 21 source points with two polarization directions each. We obtain well converged results with an accuracy of the diffraction orders of about one percent. The results compare well to experimental aerial imaging results. We further investigate the convergence of 3D solutions towards quasi-exact results obtained with different methods.
Cite
@article{arxiv.physics/0610218,
title = {Rigorous Simulation of 3D Masks},
author = {S. Burger and R. Köhle and L. Zschiedrich and H. Nguyen and F. Schmidt and R. März and C. Nölscher},
journal= {arXiv preprint arXiv:physics/0610218},
year = {2009}
}
Comments
8 pages, 5 figures (see original publication for images with a better resolution)