Reduced leakage current in BiFeO3 thin films with rectifying contacts

Yao Shuai; Shengqiang Zhou; Stephan Streit; Helfried Reuther; Danilo Bürger; Stefan Slesazeck; Thomas Mikolajick; Manfred Helm; Heidemarie Schmidt

doi:10.1063/1.3597794

Reduced leakage current in BiFeO3 thin films with rectifying contacts

Materials Science 2011-06-08 v1

Authors: Yao Shuai , Shengqiang Zhou , Stephan Streit , Helfried Reuther , Danilo Bürger , Stefan Slesazeck , Thomas Mikolajick , Manfred Helm , Heidemarie Schmidt

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Abstract

BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.

Keywords

epitaxial thin films thin films thin film physics

Cite

@article{arxiv.1105.3825,
  title  = {Reduced leakage current in BiFeO3 thin films with rectifying contacts},
  author = {Yao Shuai and Shengqiang Zhou and Stephan Streit and Helfried Reuther and Danilo Bürger and Stefan Slesazeck and Thomas Mikolajick and Manfred Helm and Heidemarie Schmidt},
  journal= {arXiv preprint arXiv:1105.3825},
  year   = {2011}
}

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15 pages, 4 figures, accepted by Appl. Phys. Lett

Reduced leakage current in BiFeO3 thin films with rectifying contacts

Abstract

Keywords

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