Thin Lead Titanate films grown by Molecular Beam Epitaxy

Gijsbert Rispens; Beatriz Noheda

Thin Lead Titanate films grown by Molecular Beam Epitaxy

Materials Science 2007-05-23 v1

Authors: Gijsbert Rispens , Beatriz Noheda

Abstract

The growth of atomically-flat thin films of ferroelectric PbTiO3 on SrTiO3 substrates, using molecular beam epitaxy, is reported. The main issue in the growth of these materials is the high volatility of lead. This can be largely overcome by using PbO, instead of Pb, as a source and by using atomic oxygen during growth. The continuous decrease of the out-of-plane lattice parameter with increasing temperature in the investigated range, indicates that PbTiO3 is still ferroelectric at the growth temperature (Tg= 600oC), which agrees with the theoretical prediction of TC= 765oC (compared to TCbulk= 490oC) for the present mismatch strain values.

Keywords

molecular beam epitaxy lead titanate ferroelectric thin films out-of-plane lattice parameter mismatch strain

Cite

@article{arxiv.0704.2691,
  title  = {Thin Lead Titanate films grown by Molecular Beam Epitaxy},
  author = {Gijsbert Rispens and Beatriz Noheda},
  journal= {arXiv preprint arXiv:0704.2691},
  year   = {2007}
}

Comments

Proceedings of the Rank-Prize symposium on Opto-electronics held in Grasmere (UK), September 2006. To appear in "Ferroelectrics"

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