To investigate leakage current density versus electric field characteristics, epitaxial EuTiO3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition and were post-annealed in a reducing atmosphere. This investigation found that conduction mechanisms are strongly related to temperature and voltage polarity. It was determined that from 50 to 150 K the dominant conduction mechanism was a space-charge-limited current under both negative and positive biases. From 200 to 300 K, the conduction mechanism shows Schottky emission and Fowler-Nordheim tunneling behaviors for the negative and positive biases, respectively. This work demonstrates that Eu3+ is one source of leakage current in EuTiO3 thin films.
@article{arxiv.1208.5577,
title = {Conduction mechanisms of epitaxial EuTiO3 thin films},
author = {R. Zhao and W. W. Li and L. Chen and Q. Q. Meng and J. Yang and H. Wang and Y. Q. Wang and R. J. Tang and H. Yang},
journal= {arXiv preprint arXiv:1208.5577},
year = {2015}
}