English

Planar Hall effect in antiferromagnetic MnTe thin films

Materials Science 2019-04-09 v2 Mesoscale and Nanoscale Physics

Abstract

We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles.

Keywords

Cite

@article{arxiv.1805.12200,
  title  = {Planar Hall effect in antiferromagnetic MnTe thin films},
  author = {Gen Yin and Jie-Xiang Yu and Yizhou Liu and Roger K. Lake and Jiadong Zang and Kang L. Wang},
  journal= {arXiv preprint arXiv:1805.12200},
  year   = {2019}
}
R2 v1 2026-06-23T02:13:58.518Z