Optical characterization of deuterated silicon-rich nitride waveguides

Xavier X. Chia; George F. R. Chen; Yanmei Cao; Peng Xing; Doris K. T. Ng; Dawn T. H. Tan

Optical characterization of deuterated silicon-rich nitride waveguides

Optics 2022-02-22 v1 Applied Physics

Authors: Xavier X. Chia , George F. R. Chen , Yanmei Cao , Peng Xing , Doris K. T. Ng , Dawn T. H. Tan

Abstract

Chemical vapor deposition-based growth techniques allow flexible design of CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized. We compare the absorption at 1550nm wavelength region for films grown with $SiH_4$ and $SiD_4$ , and experimentally confirm that the silicon-rich nitride films grown with $SiD_4$ eliminates Si-H related absorption. Waveguides fabricated on the films are further shown to possess a linear and nonlinear refractive index of 2.46 and $9.8$ X $10^{-18} m^2 W^{-1}$ respectively.

Keywords

silicon-rich nitride deuterated films optical waveguides plasma-enhanced chemical vapor deposition linear refractive index nonlinear refractive index absorption

Cite

@article{arxiv.2202.10023,
  title  = {Optical characterization of deuterated silicon-rich nitride waveguides},
  author = {Xavier X. Chia and George F. R. Chen and Yanmei Cao and Peng Xing and Doris K. T. Ng and Dawn T. H. Tan},
  journal= {arXiv preprint arXiv:2202.10023},
  year   = {2022}
}

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12 pages, 5 figures

Optical characterization of deuterated silicon-rich nitride waveguides

Abstract

Keywords

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