Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Jeffrey A. Klug; Nicholas G. Becker; Nickolas R. Groll; Chaoyue Cao; Matthew S. Weimer; Michael J. Pellin; John F. Zasadzinski; Thomas Proslier

doi:10.1063/1.4831977

Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Materials Science 2013-11-21 v1

Authors: Jeffrey A. Klug , Nicholas G. Becker , Nickolas R. Groll , Chaoyue Cao , Matthew S. Weimer , Michael J. Pellin , John F. Zasadzinski , Thomas Proslier

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Abstract

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (\alpha-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.

Keywords

heteroepitaxy group IV-VI nitrides atomic layer deposition sapphire superconducting properties resistivity thin films

Cite

@article{arxiv.1309.1789,
  title  = {Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition},
  author = {Jeffrey A. Klug and Nicholas G. Becker and Nickolas R. Groll and Chaoyue Cao and Matthew S. Weimer and Michael J. Pellin and John F. Zasadzinski and Thomas Proslier},
  journal= {arXiv preprint arXiv:1309.1789},
  year   = {2013}
}

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3 figures, 1 table, ~4 pages

Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

Abstract

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