On-demand generation of shallow silicon vacancy in silicon carbide
Abstract
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical to achieve the on-demand shallow spin-defect generation. In this work, we present the generation and characterization of shallow silicon vacancies in silicon carbide by using different implanted ions and annealing conditions. The conversion efficiency of silicon vacancy of helium ions is shown to be higher than that by carbon and hydrogen ions in a wide implanted fluence range. Furthermore, after optimizing annealing conditions, the conversion efficiency can be increased more than 2 times. Due to the high density of the generated ensemble defects, the sensitivity to sense a static magnetic field can be research as high as , which is about 15 times higher than previous results. By carefully optimizing implanted conditions, we further show that a single silicon vacancy array can be generated with about 80 % conversion efficiency, which reaches the highest conversion yield in solid state systems. The results pave the way for using on-demand generated shallow silicon vacancy for quantum information processing and quantum photonics.
Keywords
Cite
@article{arxiv.1810.11252,
title = {On-demand generation of shallow silicon vacancy in silicon carbide},
author = {Jun-Feng Wang and Qiang Li and Fei-Fei Yan and He Liu and Guo-Ping Guo and Wei-Ping Zhang and Xiong Zhou and Zhi-Hai Lin and Jin-Ming Cui and Xiao-Ye Xu and Jin-Shi Xu and Chuan-Feng Li and Guang-Can Guo},
journal= {arXiv preprint arXiv:1810.11252},
year = {2018}
}
Comments
5 figures