Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Harpreet Singh; Andrei N. Anisimov; Sergei S. Nagalyuk; Eugenii N. Mokhov; Pavel G. Baranov; Dieter Suter

doi:10.1103/PhysRevB.101.134110

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Quantum Physics 2020-04-29 v2 Mesoscale and Nanoscale Physics

Authors: Harpreet Singh , Andrei N. Anisimov , Sergei S. Nagalyuk , Eugenii N. Mokhov , Pavel G. Baranov , Dieter Suter

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Abstract

Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This includes the temperature-dependent photoluminescence, optically detected magnetic resonance, and the relaxation times of the longitudinal and transverse components of the spins, during free precession as well as under the influence of different refocusing schemes.

Keywords

silicon vacancy centers 6H-SiC spin-3/2 photoluminescence optically detected magnetic resonance relaxation times

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@article{arxiv.2001.06842,
  title  = {Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC},
  author = {Harpreet Singh and Andrei N. Anisimov and Sergei S. Nagalyuk and Eugenii N. Mokhov and Pavel G. Baranov and Dieter Suter},
  journal= {arXiv preprint arXiv:2001.06842},
  year   = {2020}
}

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9 pages, 13 figures

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Abstract

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