Nitrogen-vacancy centers created by N$^+$ ion implantation through screening SiO$_2$ layers on diamond

Kazuki Ito; Hiroshi Saito; Hideyuki Watanabe; Tokuyuki Teraji; Kohei M. Itoh; Eisuke Abe

doi:10.1063/1.4984060

Nitrogen-vacancy centers created by N$^+$ ion implantation through screening SiO$_2$ layers on diamond

Materials Science 2017-05-24 v1 Quantum Physics

Authors: Kazuki Ito , Hiroshi Saito , Hideyuki Watanabe , Tokuyuki Teraji , Kohei M. Itoh , Eisuke Abe

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Abstract

We report on an ion implantation technique utilizing a screening mask made of SiO $_2$ to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest NV density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 10 $^{11}$ cm $^2$ and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of $\mu$ s.

Keywords

nitrogen-vacancy centers ion implantation SiO2 screening layer diamond ion channeling coherence time depth profile

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@article{arxiv.1703.06310,
  title  = {Nitrogen-vacancy centers created by N$^+$ ion implantation through screening SiO$_2$ layers on diamond},
  author = {Kazuki Ito and Hiroshi Saito and Hideyuki Watanabe and Tokuyuki Teraji and Kohei M. Itoh and Eisuke Abe},
  journal= {arXiv preprint arXiv:1703.06310},
  year   = {2017}
}

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5 pages, 4 figures

Nitrogen-vacancy centers created by N$^+$ ion implantation through screening SiO$_2$ layers on diamond

Abstract

Keywords

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