Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation

K. -M. C. Fu; C. Santori; P. E. Barclay; R. G. Beausoleil

doi:10.1063/1.3364135

Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation

Mesoscale and Nanoscale Physics 2015-05-18 v1 Materials Science

Authors: K. -M. C. Fu , C. Santori , P. E. Barclay , R. G. Beausoleil

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Abstract

The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.

Keywords

nitrogen-vacancy center charge state conversion selective oxidation diamond ion implantation quantum information magnetic sensing

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@article{arxiv.1001.5449,
  title  = {Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation},
  author = {K. -M. C. Fu and C. Santori and P. E. Barclay and R. G. Beausoleil},
  journal= {arXiv preprint arXiv:1001.5449},
  year   = {2015}
}

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4 pages, 3 figures

Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation

Abstract

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