Implantation of labelled single nitrogen vacancy centers in diamond using 15N

J. R. Rabeau*; P. Reichart; G. Tamanyan; D. N. Jamieson; S. Prawer; F. Jelezko; T. Gaebel; I. Popa; M. Domhan; J. Wrachtrup

doi:10.1063/1.2158700

Implantation of labelled single nitrogen vacancy centers in diamond using 15N

Materials Science 2009-11-11 v3

Authors: J. R. Rabeau* , P. Reichart , G. Tamanyan , D. N. Jamieson , S. Prawer , F. Jelezko , T. Gaebel , I. Popa , M. Domhan , J. Wrachtrup

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Abstract

Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV 15N (I = 1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of the NV- centers. The hyperfine spectrum from 15NV- arising from implanted 15N can be distinguished from 14NV- centers created by native 14N (I = 1) sites. Analysis indicates 1 in 40 implanted 15N atoms give rise to an optically observable 15NV- center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.

Keywords

nitrogen vacancy NV centers 15N implantation hyperfine coupling optically detected magnetic resonance

Cite

@article{arxiv.cond-mat/0511722,
  title  = {Implantation of labelled single nitrogen vacancy centers in diamond using 15N},
  author = {J. R. Rabeau* and P. Reichart and G. Tamanyan and D. N. Jamieson and S. Prawer and F. Jelezko and T. Gaebel and I. Popa and M. Domhan and J. Wrachtrup},
  journal= {arXiv preprint arXiv:cond-mat/0511722},
  year   = {2009}
}

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14 pages, 3 figures, to appear in Applied Physics Letters

Implantation of labelled single nitrogen vacancy centers in diamond using 15N

Abstract

Keywords

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