Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors
Materials Science
2015-01-13 v1 Mesoscale and Nanoscale Physics
Optics
Abstract
A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor structures. The optical beam induced scattering mode of this microscope is designed for the investigation of recombination-active defects but unlike EBIC it requires neither Schottky barrier or p--n junction nor special preparation of samples
Keywords
Cite
@article{arxiv.1106.0751,
title = {Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors},
author = {O. V. Astafiev and V. P. Kalinushkin and V. A. Yuryev},
journal= {arXiv preprint arXiv:1106.0751},
year = {2015}
}
Comments
9-th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, UK, 20-23 March 1995