Related papers: Mid-IR-laser microscopy as a tool for defect inves…
This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for…
A method of the mid-IR-laser microscopy has been proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in…
A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and…
Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the…
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a…
Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been…
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ Si$_x$Ge$_{1-x}$---a…
With continuous progression of Moore's Law, integrated circuit (IC) device complexity is also increasing. Scanning Electron Microscope (SEM) image based extensive defect inspection and accurate metrology extraction are two main challenges…
Owing to its capacity for unique (bio)-chemical specificity, microscopy withmid-IR illumination holds tremendous promise for a wide range of biomedical and industrial applications. The primary limitation, however, remains detection; with…
Scanning photocurrent microscopy (SPCM) has been widely used for characterizing charge transport properties, in particular, the minority carrier diffusion length of semiconductors. However, studying lightly doped or intrinsic semiconductors…
A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A classifcation of scattering inhomogeneities in initial…
The optical elements comprised of sub-diffractive light scatterers, or metasurfaces, hold a promise to reduce the footprint and unfold new functionalities of optical devices. A particular interest is focused on metasurfaces for manipulation…
This paper aims to evaluate mid-infrared (MIR) Optical Coherence Tomography (OCT) systems as a tool to penetrate different materials and detect sub-surface irregularities. This is useful for monitoring production processes, allowing…
A growing need exists for efficient and accurate methods for detecting defects in semiconductor materials and devices. These defects can have a detrimental impact on the efficiency of the manufacturing process, because they cause critical…
The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since…
Sensing with undetected photons has become a vibrant, application-driven research domain with a special focus on the mid-infrared (mid-IR) wavelength region. Since the mid-IR contains spectral bands with highly specific and strong molecular…
Accurate measurement of light wavelength is critical for applications in spectroscopy, optical communication, and semiconductor manufacturing, ensuring precision and consistency of sensing, high-speed data transmission and device…
Mid-circuit measurement and reset of subsets of qubits is a crucial ingredient of quantum error correction and many quantum information applications. Measurement of atomic qubits is accomplished through resonant fluorescence, which…
Mid-infrared absorption spectroscopy is a well-established technique for non-destructive quantitative molecular analysis. Waveguide-integrated sensors provide a particularly compact solution operating with reduced sample volumes while…
Implementation of a semiconductor as a scintillator with a lattice-matched surface photo-diode for radiation detection requires efficient luminescence collection. Low and heavily doped bulk n-InP has been studied to optimize luminescence…