Implementation of a semiconductor as a scintillator with a lattice-matched surface photo-diode for radiation detection requires efficient luminescence collection. Low and heavily doped bulk n-InP has been studied to optimize luminescence transmission via photon recycling.
@article{arxiv.1011.2132,
title = {Anomalous propagation of luminescence through bulk n-InP},
author = {Serge Luryi and Oleg G. Semyonov and Arsen Subashiev and Zhichao Chen},
journal= {arXiv preprint arXiv:1011.2132},
year = {2010}
}
Comments
2 pages, 2 figures, Frontiers in Optics, JTuA33, Rochester, NY, September 24-28, 2010