Lateral optical anisotropy of type-II interfaces in the tight-binding approach
Abstract
We have developed the tight-binding theory to study electronic and optical properties of type-II heterostructures CA/C'A' grown from the zinc-blende semiconductors CA and C'A' along the crystallographic direction [001]. The sp^3s* nearest-neighbor tight-binding model with allowance for the spin-orbit interaction is used to calculate the energy states and the in-plane linear polarization of the spatially-indirect band-edge photoluminescence of InAs/AlSb and ZnSe/BeTe multi-layered structures. The interface parameters for a pair of the nonstandard planes C-A' or C'-A are considered as fitting variables. A wide range of these parameters are shown to allow Tamm-like hole states localized at the interfaces. The theory leads to giant values of the light polarization in the both type-II heterosystems in agreement with existing experimental findings.
Keywords
Cite
@article{arxiv.cond-mat/0403297,
title = {Lateral optical anisotropy of type-II interfaces in the tight-binding approach},
author = {E. L. Ivchenko and M. O. Nestoklon},
journal= {arXiv preprint arXiv:cond-mat/0403297},
year = {2008}
}
Comments
9 pages, 6 figures, submitted to Phys. Rev. B