Electronic structure and optical properties of ZnS/CdS nanoheterostructures
Abstract
The electronic and optical properties of spherical nanoheterostructures are studied within the semi-empirical tight-binding model including the spin-orbit interaction. We use a symmetry-based approach previously applied to CdSe and CdTe quantum dots. The complete one-particle spectrum is obtained by using group-theoretical methods. The excitonic eigenstates are then deduced in the configuration-interaction approach by fully taking into account the Coulomb direct and exchange interactions. Here we focus on ZnS/CdS, ZnS/CdS/ZnS and CdS/ZnS nanocrystals with particular emphasis on recently reported experimental data. The degree of carrier localization in the CdS well layer is analyzed as a function of its thickness. We compute the excitonic fine structure, i.e., the relative intensities of low-energy optical transitions. The calculated values of the absorption gap show a good agreement with the experimental ones. Enhanced resonant photoluminescence Stokes shifts are predicted.
Cite
@article{arxiv.cond-mat/0306400,
title = {Electronic structure and optical properties of ZnS/CdS nanoheterostructures},
author = {J. Perez-Conde and A. K. Bhattacharjee},
journal= {arXiv preprint arXiv:cond-mat/0306400},
year = {2009}
}
Comments
6 pages, 4 Figures, revtex4